DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, C | ko |
dc.contributor.author | Kim, J | ko |
dc.contributor.author | Kweon, In-So | ko |
dc.date.accessioned | 2017-04-17T07:29:17Z | - |
dc.date.available | 2017-04-17T07:29:17Z | - |
dc.date.created | 2017-04-10 | - |
dc.date.created | 2017-04-10 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | ELECTRONICS LETTERS, v.53, no.2, pp.79 - 80 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/223288 | - |
dc.description.abstract | Binary descriptors have been shown to be computationally efficient while their recognition rate is poorer than that of floating-point descriptors. A method of improving both the recognition rate and the speed of computation for thresholded intensity rank descriptor, one of the binary descriptors is proposed. In experiments, our descriptor shows better performance than other binary descriptors in terms of both the recognition rate and the speed of computation. | - |
dc.language | English | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.subject | FEATURES | - |
dc.title | Fast and robust binary descriptor using intensity rank binning | - |
dc.type | Article | - |
dc.identifier.wosid | 000394436200013 | - |
dc.identifier.scopusid | 2-s2.0-85010046879 | - |
dc.type.rims | ART | - |
dc.citation.volume | 53 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 79 | - |
dc.citation.endingpage | 80 | - |
dc.citation.publicationname | ELECTRONICS LETTERS | - |
dc.identifier.doi | 10.1049/el.2016.0863 | - |
dc.contributor.localauthor | Kweon, In-So | - |
dc.contributor.nonIdAuthor | Park, C | - |
dc.contributor.nonIdAuthor | Kim, J | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FEATURES | - |
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