RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes

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dc.contributor.authorLee, Jongwonko
dc.contributor.authorYang, Kyounghoonko
dc.date.accessioned2017-03-30T09:21:37Z-
dc.date.available2017-03-30T09:21:37Z-
dc.date.created2017-03-29-
dc.date.created2017-03-29-
dc.date.created2017-03-29-
dc.date.issued2017-01-
dc.identifier.citationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.1, pp.61 - 63-
dc.identifier.issn1531-1309-
dc.identifier.urihttp://hdl.handle.net/10203/222770-
dc.description.abstractThis letter reports the analysis of RF power characteristics in a microwave amplifier using resonant tunneling diodes (RTDs). The implemented IC shows a return loss of more than 11 dB with a low dc-power consumption of 0.42 mW and a power gain of 8.6 dB at 5.8 GHz. The maximum linear RF output power with a uniform gain of 8.6 dB is measured to be -25.4 dBm at the same frequency. The gain hump phenomenon is observed in an input power range from -32 dBm to -16 dBm, and is shown to arise from a sudden movement of the operating point from the negative differential resistance (NDR) region to the positive differential resistance (PDR) region, based on a large-signal load-line analysis together with a harmonic balance simulation.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleRF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes-
dc.typeArticle-
dc.identifier.wosid000393795300021-
dc.identifier.scopusid2-s2.0-85003441344-
dc.type.rimsART-
dc.citation.volume27-
dc.citation.issue1-
dc.citation.beginningpage61-
dc.citation.endingpage63-
dc.citation.publicationnameIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.identifier.doi10.1109/LMWC.2016.2629984-
dc.contributor.localauthorYang, Kyounghoon-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorMMIC amplifiers-
dc.subject.keywordAuthornegative resistance circuits-
dc.subject.keywordAuthorresonant tunneling diodes (RTDs)-
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