Resistive self-mixing based analytical model for terahertz MOSFET detectors

Abstract

This thesis presents an analytical model for terahertz MOSFET that operates in the sub-threshold and triode region based on the resistive self-mixing theory. The model that contains the loading effect of measurement environment provides intuitive understanding for the response of the MOSFET detector that agrees well with measurements.The proposed model can be applied to both voltage and current readout mode operations. The test structure which consists of on-chip patch antenna, MOSFET, and matching circuit has been implemented in a 65 nm CMOS technology for model verification. The model and measured results show good agreement providing insights for the optimum MOSFET based detector design.