DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Sang Ouk | - |
dc.contributor.advisor | 김상욱 | - |
dc.contributor.author | Lee, Kyung Eun | - |
dc.contributor.author | 이경은 | - |
dc.date.accessioned | 2017-03-29T02:35:08Z | - |
dc.date.available | 2017-03-29T02:35:08Z | - |
dc.date.issued | 2013 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=657327&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/221561 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2013.2 ,[ii, 40 p. :] | - |
dc.description.abstract | Fabricating graphene oxide and reduction of it offers new routes for creation of carbon-based electronics. However, high edge resistance of reduced graphene oxide is a huge barrier for electrical application. Here, we introduce that large graphene oxide flake can be selectively separated from as-made solution by its liquid crystal property. Large graphene oxide solution overcome its limitation on fabrication and was easily spin-casted by using electrostatic interaction with amine group of self-assembled monolayer. After nitrogen doping with hydrazine and ammonia gas, N-doped reduced large graphene oxide film shows much lower sheet resistance ($~300 \Omega /sq$ at 80% transmittance.) than N-doped reduced graphene oxide. Furthermore, separation of small flakes did not affect to the sheet resistance because large flakes dominates whole sheet resistance of the film. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | graphene oxide | - |
dc.subject | liquid crystal | - |
dc.subject | electronics | - |
dc.subject | surface modification | - |
dc.subject | 그래핀 옥사이드 | - |
dc.subject | 액정 | - |
dc.subject | 분리법 | - |
dc.subject | 표면처리 | - |
dc.title | Separation of large graphene oxide and Its electrical property | - |
dc.title.alternative | 거대 그래핀 옥사이드의 분리와 그의 전기적 특성연구 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
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