DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Dong-Il | ko |
dc.contributor.author | Lee, Byung-Hyun | ko |
dc.contributor.author | Yoon, Jinsu | ko |
dc.contributor.author | Ahn, Dae-Chul | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Kim, Myung-Su | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Kang, Min-Ho | ko |
dc.contributor.author | Kim, Kwanghee | ko |
dc.contributor.author | Lim, Meehyun | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2017-02-09T08:22:39Z | - |
dc.date.available | 2017-02-09T08:22:39Z | - |
dc.date.created | 2016-11-17 | - |
dc.date.created | 2016-11-17 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.citation | ACS NANO, v.10, no.12, pp.10894 - 10900 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220440 | - |
dc.description.abstract | Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/mu m. Additionally, highly sensitive controllability of the threshold voltage (V-TH) was achieved using a thin back gate oxide in the same silicon frame to control power. consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | HIGH-PERFORMANCE ELECTRONICS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ARRAYS | - |
dc.subject | GATE | - |
dc.subject | INTEGRATION | - |
dc.subject | DEVICES | - |
dc.title | Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000391079700032 | - |
dc.identifier.scopusid | 2-s2.0-85008417754 | - |
dc.type.rims | ART | - |
dc.citation.volume | 10 | - |
dc.citation.issue | 12 | - |
dc.citation.beginningpage | 10894 | - |
dc.citation.endingpage | 10900 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/acsnano.6b05429 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Yoon, Jinsu | - |
dc.contributor.nonIdAuthor | Ahn, Dae-Chul | - |
dc.contributor.nonIdAuthor | Kim, Myung-Su | - |
dc.contributor.nonIdAuthor | Kang, Min-Ho | - |
dc.contributor.nonIdAuthor | Kim, Kwanghee | - |
dc.contributor.nonIdAuthor | Lim, Meehyun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | carbon nanotubes | - |
dc.subject.keywordAuthor | 3-D structure | - |
dc.subject.keywordAuthor | fin field-effect transistor (FinFET) | - |
dc.subject.keywordAuthor | wafer-scale | - |
dc.subject.keywordAuthor | high packing density | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE ELECTRONICS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | DEVICES | - |
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