Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

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Information storage system that has a potentially ultrahigh storage density based on the principles of atomic force microscopy (AFM) has been developed. Micro-electro-mechanical systems (MEMS) technology plays a major role in integration and miniaturization of the standard AFM. Its potential application for ultrahigh storage density has been demonstrated by AFM with a piezoresponse mode to write and read information bits in ferroelectric Pb(ZrxTi1-x)O-3 films. With this technique, bits as small as 40 nm in diameter have been achieved, resulting in a data storage density of simply more than 200 Gb/in(2). Retention loss phenomenon has also been observed and investigated by AFM in the piezoresponse mode. Finally, local piezoelectric measurements of PZT films by different processing technologies are discussed in detail. (C) 2002 Published by Elsevier Science B.V.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2002-05
Language
English
Article Type
Article; Proceedings Paper
Keywords

FERROELECTRIC THIN-FILMS; SCANNING PROBE MICROSCOPE; POLARIZED DOMAINS; CANTILEVERS; MICROCANTILEVER; SENSORS; SILICON

Citation

ULTRAMICROSCOPY, v.91, no.1-4, pp.103 - 110

ISSN
0304-3991
DOI
10.1016/S0304-3991(02)00088-8
URI
http://hdl.handle.net/10203/220327
Appears in Collection
MS-Journal Papers(저널논문)
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