DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cha, Eun Seok | ko |
dc.contributor.author | Ko, Young Min | ko |
dc.contributor.author | Kim, Seon Cheol | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2017-01-23T02:46:25Z | - |
dc.date.available | 2017-01-23T02:46:25Z | - |
dc.date.created | 2017-01-16 | - |
dc.date.created | 2017-01-16 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | CURRENT APPLIED PHYSICS, v.17, no.1, pp.47 - 54 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220113 | - |
dc.description.abstract | Conventional CdTe solar cells have a CdS window layer, in which an absorption loss of photons with more than 2.4 eV occurs through the CdS layer. A thinner CdS layer was applied to enhance light transmission and a ZnO buffer layer with a band gap of 3.3 eV was introduced to suppress shunting through the thinner CdS window layer. A 100-nm thick ZnO layer sputter-deposited at 300 degrees C had uniform coverage on a transparent conductive oxide (TCO) after a subsequent high-temperature process. The ZnO layer was effective in preventing shunting through the CdS window layer so that the open-circuit voltage and fill factor of the CdTe solar cells were recovered and the short-circuit current was enhanced over that of the conventional CdTe solar cell. In the ZnO/CdS/CdTe configuration, the short-circuit current was further improved throughout the visible wavelength region by replacing the Cu-metal contact with a Cu solution contact. As a result the short-circuit current from 21.7 to 26.1 mA/cm(2) and the conversion efficiency of the CdTe solar cell increased from 12 to 15% without antireflective coating. Our result indicates that the Cu solution back contact is a critical factor for achieving a higher cell efficiency in addition to ZnO buffer layer. (C) 2016 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | EFFICIENCY | - |
dc.subject | CU | - |
dc.subject | STABILITY | - |
dc.title | Short-circuit current improvement in CdTe solar cells by combining a ZnO buffer layer and a solution back contact | - |
dc.type | Article | - |
dc.identifier.wosid | 000390428900009 | - |
dc.identifier.scopusid | 2-s2.0-84993964511 | - |
dc.type.rims | ART | - |
dc.citation.volume | 17 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 47 | - |
dc.citation.endingpage | 54 | - |
dc.citation.publicationname | CURRENT APPLIED PHYSICS | - |
dc.identifier.doi | 10.1016/j.cap.2016.10.014 | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | CdTe solar cells | - |
dc.subject.keywordAuthor | ZnO buffer layer | - |
dc.subject.keywordAuthor | Cu solution contact | - |
dc.subject.keywordAuthor | Short circuit current | - |
dc.subject.keywordAuthor | Quantum efficiency | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordPlus | STABILITY | - |
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