Construction of probe-based data storage with ultra-high areal density

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dc.contributor.authorShin, Hyunjung-
dc.contributor.authorHong, Daniel Seungbum-
dc.contributor.authorJeon, Jong Up-
dc.contributor.authorChoi, Jae-joon-
dc.contributor.authorJeong, Hee-Moon-
dc.contributor.authorMin, Dong-Ki-
dc.contributor.authorKim, Yong Il-
dc.contributor.authorLee, Chang Soo-
dc.contributor.authorLee, Sukhan-
dc.date.accessioned2017-01-19T01:16:35Z-
dc.date.available2017-01-19T01:16:35Z-
dc.date.created2017-01-18-
dc.date.issued2001-10-30-
dc.identifier.citation2001 1st IEEE Conference on Nanotechnology-
dc.identifier.urihttp://hdl.handle.net/10203/220075-
dc.description.abstractOur probe-based data storage (PDS) system consists of four parts: signal processing module, multi-probe array, xy-planar actuator, and recording media. The signal-processing module has 2 layers attached to each other. The first layer has 3 D wiring, and it is assembled to the second layer (ASIC module) for the signal processing circuit. The multi-probe array is designed to increase recording and reading speed of the data bits. Each probe has cantilever and tip that are characterized by a tip height of 15 /spl mu/m, a tip radius of 15 nm, a natural frequency of 18.75 kHz and a DC sensitivity of 16.7 nm/V. Poly-silicon probe was fabricated by molding technique to produce high aspect ratio tips. The electrostatic planar actuator serves as a scanner that positions the probe to the right place by moving the media in xy-plane. The moving distance was /spl plusmn/40 /spl mu/m at 10/spl plusmn/10 V, DC gain was 3.04 /spl mu/m/V at 4 V, and the resonance frequency was 143 Hz. The: recording media stores the recorded information in the form of electric polarization in ferroelectric materials. Ferroelectric Pb(Zr,Ti)O/sub 3/ thin film is a candidate material for the media, and it can yield a memory density as high as 400 Gb/in/sup 2/ by recording bits as small as 35 nm in diameter. The bits are fully rewritable and retain the information for a generation at the temperature range below than 50 /spl deg/C.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleConstruction of probe-based data storage with ultra-high areal density-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2001 1st IEEE Conference on Nanotechnology-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationMaui, Hawaii-
dc.identifier.doi10.1109/NANO.2001.966420-
dc.contributor.localauthorHong, Daniel Seungbum-
dc.contributor.nonIdAuthorShin, Hyunjung-
dc.contributor.nonIdAuthorJeon, Jong Up-
dc.contributor.nonIdAuthorChoi, Jae-joon-
dc.contributor.nonIdAuthorJeong, Hee-Moon-
dc.contributor.nonIdAuthorMin, Dong-Ki-
dc.contributor.nonIdAuthorKim, Yong Il-
dc.contributor.nonIdAuthorLee, Chang Soo-
dc.contributor.nonIdAuthorLee, Sukhan-
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