Passivation of the bottom interface of Cu2ZnSnSe4 solar cells using a patterned dielectric layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Byungha | - |
| dc.date.accessioned | 2017-01-18T05:20:41Z | - |
| dc.date.available | 2017-01-18T05:20:41Z | - |
| dc.date.created | 2017-01-05 | - |
| dc.date.issued | 2016-02-17 | - |
| dc.identifier.citation | The 3rd Korea-Japan Joint Symposium on Advanced Solar Cell | - |
| dc.identifier.uri | http://hdl.handle.net/10203/219997 | - |
| dc.language | English | - |
| dc.publisher | The Korea-Japan Joint Symposium on Advanced Solar Cell | - |
| dc.title | Passivation of the bottom interface of Cu2ZnSnSe4 solar cells using a patterned dielectric layer | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 3rd Korea-Japan Joint Symposium on Advanced Solar Cell | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | Welli Hilli Park, Kangwon Province, Korea | - |
| dc.contributor.localauthor | Shin, Byungha | - |
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