The effect of Al doping on effective work function in metal/HfO2 interfaces
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Geun Myeong | ko |
| dc.contributor.author | Oh, Young Jun | ko |
| dc.contributor.author | Chang, Kee Joo | ko |
| dc.date.accessioned | 2017-01-13T07:12:12Z | - |
| dc.date.available | 2017-01-13T07:12:12Z | - |
| dc.date.created | 2016-12-29 | - |
| dc.date.issued | 2016-08 | - |
| dc.identifier.citation | 33rd International Conference on the Physics of Semiconductors | - |
| dc.identifier.uri | http://hdl.handle.net/10203/218938 | - |
| dc.language | English | - |
| dc.publisher | Peking University | - |
| dc.title | The effect of Al doping on effective work function in metal/HfO2 interfaces | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 33rd International Conference on the Physics of Semiconductors | - |
| dc.identifier.conferencecountry | CC | - |
| dc.identifier.conferencelocation | Beijing International Convention Center | - |
| dc.contributor.localauthor | Chang, Kee Joo | - |
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