Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature

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dc.contributor.authorRyu, HYko
dc.contributor.authorLee, Yong-Heeko
dc.contributor.authorSellin, RLko
dc.contributor.authorBimberg, Dko
dc.date.accessioned2011-01-24T08:38:12Z-
dc.date.available2011-01-24T08:38:12Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2001-11-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.79, no.22, pp.3573 - 3575-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/21788-
dc.description.abstractHighly efficient extraction of photoluminescence is observed from two-dimensional photonic crystal slabs employing InGaAs quantum dots as active material. The introduction of quantum dots reduces diffusion of carriers and thereby suppresses the surface recombination at the air-hole sidewalls of the photonic crystal. Around the normalized frequency of 0.7, over thirty-fold enhancement of the photoluminescence extraction is achieved at 78 K, indicating strong coupling to leaky modes of the free-standing photonic crystal slab. In addition, when the photoluminescence spectra overlaps with a photonic band gap, enhanced light extraction originating from the photonic band gap is observed experimentally. (C) 2001 American Institute of Physics.-
dc.description.sponsorshipThis work was supported by the National Research Laboratory Project of Korea and by Sfb 296 of the Deutsche Forschungsgemeinschaft.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectSPONTANEOUS EMISSION-
dc.subjectEMITTING-DIODES-
dc.subjectLASERS-
dc.subjectEFFICIENCY-
dc.titleOver 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature-
dc.typeArticle-
dc.identifier.wosid000172204400005-
dc.identifier.scopusid2-s2.0-0035956016-
dc.type.rimsART-
dc.citation.volume79-
dc.citation.issue22-
dc.citation.beginningpage3573-
dc.citation.endingpage3575-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorRyu, HY-
dc.contributor.nonIdAuthorSellin, RL-
dc.contributor.nonIdAuthorBimberg, D-
dc.type.journalArticleArticle-
dc.subject.keywordPlusSPONTANEOUS EMISSION-
dc.subject.keywordPlusEMITTING-DIODES-
dc.subject.keywordPlusLASERS-
dc.subject.keywordPlusEFFICIENCY-
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