A Low Dark Current Planar-type InGaAs Guard-ring PIN Photodiode Using an ALD-Al2O3 Passivation for Short-wave Infrared Imaging Applications

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dc.contributor.author김영준-
dc.contributor.author노인섭-
dc.contributor.author노형준-
dc.contributor.authorPark, Jaehong-
dc.contributor.authorYang, Kyoung-Hoon-
dc.date.accessioned2017-01-03T07:51:25Z-
dc.date.available2017-01-03T07:51:25Z-
dc.date.created2016-11-18-
dc.date.issued2016-06-29-
dc.identifier.citationIEEE International Conference on InP and Related Materials-
dc.identifier.urihttp://hdl.handle.net/10203/215726-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleA Low Dark Current Planar-type InGaAs Guard-ring PIN Photodiode Using an ALD-Al2O3 Passivation for Short-wave Infrared Imaging Applications-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameIEEE International Conference on InP and Related Materials-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationToyama-
dc.contributor.localauthor김영준-
dc.contributor.localauthor노인섭-
dc.contributor.localauthor노형준-
dc.contributor.localauthorPark, Jaehong-
dc.contributor.localauthorYang, Kyoung-Hoon-
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EE-Conference Papers(학술회의논문)
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