First-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors

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dc.contributor.authorAhn, Yongsooko
dc.contributor.authorShin, Mincheolko
dc.date.accessioned2017-01-03T07:42:17Z-
dc.date.available2017-01-03T07:42:17Z-
dc.date.created2016-11-17-
dc.date.issued2016-08-23-
dc.identifier.citation20th International Vacuum Congress-
dc.identifier.urihttp://hdl.handle.net/10203/215687-
dc.languageEnglish-
dc.publisherIVC-20-
dc.titleFirst-principles-based quantum transport simulations of transition metal dichalcogenides field-effect transistors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname20th International Vacuum Congress-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationBEXCO, Busan-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorAhn, Yongsoo-
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EE-Conference Papers(학술회의논문)
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