First Principles Based NEGF Simulations of Si Nanowire FETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shin, Mincheol | ko |
| dc.contributor.author | Jeong, Woo Jin | ko |
| dc.contributor.author | Seo, Junbeom | ko |
| dc.date.accessioned | 2017-01-03T07:40:25Z | - |
| dc.date.available | 2017-01-03T07:40:25Z | - |
| dc.date.created | 2016-11-17 | - |
| dc.date.created | 2016-11-17 | - |
| dc.date.created | 2016-11-17 | - |
| dc.date.issued | 2016-09-07 | - |
| dc.identifier.citation | International Conference on Simulation of Semiconductor Processes and Devices 2016 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/215658 | - |
| dc.language | English | - |
| dc.publisher | SISPAD | - |
| dc.title | First Principles Based NEGF Simulations of Si Nanowire FETs | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000386893600052 | - |
| dc.identifier.scopusid | 2-s2.0-85015615333 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | International Conference on Simulation of Semiconductor Processes and Devices 2016 | - |
| dc.identifier.conferencecountry | GE | - |
| dc.identifier.conferencelocation | Le Meridien Grand Hotel, Nuremberg | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Jeong, Woo Jin | - |
| dc.contributor.nonIdAuthor | Seo, Junbeom | - |
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 2 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.