Efficient atomistic simulation of InAs ultra-thin body tunnel FETs based on the TB-NEGF method

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dc.contributor.authorJeong, Woo Jinko
dc.contributor.authorShin, Mincheolko
dc.date.accessioned2017-01-03T07:13:30Z-
dc.date.available2017-01-03T07:13:30Z-
dc.date.created2016-11-17-
dc.date.issued2016-07-13-
dc.identifier.citationNano Korea 2016-
dc.identifier.urihttp://hdl.handle.net/10203/215525-
dc.languageEnglish-
dc.publisherNano Korea-
dc.titleEfficient atomistic simulation of InAs ultra-thin body tunnel FETs based on the TB-NEGF method-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameNano Korea 2016-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationKINTEX 제2전시장7,8홀-
dc.contributor.localauthorShin, Mincheol-
dc.contributor.nonIdAuthorJeong, Woo Jin-
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EE-Conference Papers(학술회의논문)
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