Wideband Equivalent Circuit Model of Through-Silicon-Via with MOS Capacitance Effect

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dc.contributor.authorKim, Kibeomko
dc.contributor.authorPark, Hyun Hoko
dc.contributor.authorAhn, Seungyoungko
dc.date.accessioned2017-01-03T06:00:36Z-
dc.date.available2017-01-03T06:00:36Z-
dc.date.created2016-11-29-
dc.date.issued2016-05-18-
dc.identifier.citationAsia-Pacific Electromagnetic Compatibility (APEMC) Symposium-
dc.identifier.urihttp://hdl.handle.net/10203/215284-
dc.languageEnglish-
dc.publisherAPEMC Society-
dc.titleWideband Equivalent Circuit Model of Through-Silicon-Via with MOS Capacitance Effect-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameAsia-Pacific Electromagnetic Compatibility (APEMC) Symposium-
dc.identifier.conferencecountryCC-
dc.identifier.conferencelocationShenzhen Convention and Exhibition Center-
dc.contributor.localauthorAhn, Seungyoung-
dc.contributor.nonIdAuthorPark, Hyun Ho-
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GT-Conference Papers(학술회의논문)
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