DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Young-Suk | - |
dc.contributor.author | Shin, Sung-Chul | - |
dc.date.accessioned | 2011-01-07T03:19:23Z | - |
dc.date.available | 2011-01-07T03:19:23Z | - |
dc.date.issued | 1995-10 | - |
dc.identifier.citation | Journal of Korean Magnetics Society, Vol.5, No.5, pp.470-473 | en |
dc.identifier.issn | 1598-5385 | - |
dc.identifier.uri | http://hdl.handle.net/10203/21461 | - |
dc.description.abstract | We have constructed an apparatus for in sity measurement of stress of the film prepared by sputtering using an optical noncontact displacement detector. A Change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was 5.9 μV/Å and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about 100 Å, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X. | en |
dc.language.iso | en_US | en |
dc.publisher | 한국자기학회 | en |
dc.title | IN SITU STRESS MEASUREMENTS OF Co-BASED MULTILAYER FILMS | en |
dc.type | Article | en |
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