Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

Cited 6 time in webofscience Cited 0 time in scopus
  • Hit : 349
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorPark, Jun-Youngko
dc.contributor.authorBae, Hagyoulko
dc.contributor.authorMoon, Dong-Ilko
dc.contributor.authorJeon, Chang-Hoonko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2016-11-30T08:30:00Z-
dc.date.available2016-11-30T08:30:00Z-
dc.date.created2016-11-17-
dc.date.created2016-11-17-
dc.date.created2016-11-17-
dc.date.issued2016-11-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/214218-
dc.description.abstractA technique for achieving tunable threshold voltage (VTH) is investigated in a gate-all-around device, which is a representative floating body structure. For this concept, the in-plane gate is designed to be both a driving gate and a control gate. The control gate governs the potential distribution along the gate electrode, which acts as a built-in voltage divider in the MOSFET. During the VTH tuning by the control gate, there is no electrical performance degradation, and modulation of VTH follows a nearly perfect linear tendency. The results are verified by the electrical measurements of the fabricated device and a multi-physics simulator.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectFINFET-
dc.titleThreshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution-
dc.typeArticle-
dc.identifier.wosid000389331100006-
dc.identifier.scopusid2-s2.0-84994626525-
dc.type.rimsART-
dc.citation.volume37-
dc.citation.issue11-
dc.citation.beginningpage1391-
dc.citation.endingpage1394-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2016.2612653-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordAuthorgate-all-around (GAA)-
dc.subject.keywordAuthornanowire transistor-
dc.subject.keywordAuthortunable threshold voltage-
dc.subject.keywordPlusFINFET-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 6 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0