Sequential write-read operations in FeRh antiferromagnetic memory

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B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Neel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only, which open a realistic pathway towards operational antiferromagnetic memory devices. (C) 2015 AIP Publishing LLC.
Publisher
AMER INST PHYSICS
Issue Date
2015-09
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.107, no.12, pp.122403

ISSN
0003-6951
DOI
10.1063/1.4931567
URI
http://hdl.handle.net/10203/214153
Appears in Collection
PH-Journal Papers(저널논문)
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