DC Field | Value | Language |
---|---|---|
dc.contributor.author | Reddy, Y. Ashok Kumar | ko |
dc.contributor.author | Shin, Young Bong | ko |
dc.contributor.author | Kang, In-Ku | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2016-11-29T05:06:16Z | - |
dc.date.available | 2016-11-29T05:06:16Z | - |
dc.date.created | 2016-11-08 | - |
dc.date.created | 2016-11-08 | - |
dc.date.created | 2016-11-08 | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | CERAMICS INTERNATIONAL, v.42, no.15, pp.17123 - 17127 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | http://hdl.handle.net/10203/214098 | - |
dc.description.abstract | In this study, we investigated the substrate temperature (T-s) dependent bolometric properties on TiO2-x films for infrared image sensor applications. The film crystallinity was changed from amorphous to rutile phase with increasing the T-s. The decrement of resistivity with temperature in TiO2-x test-devices confirms the typical semiconducting property. All the test pattern devices have linear I-V characteristic performance which infers that the ohmic contact was well formed at the interface between the TiO2-x and the Ti electrode. The resistivity, activation energy (E-a) and the temperature coefficient of resistance (TCR) values of the device samples were decreased up to 200 degrees C of T-s. The sample deposited at 200 degrees C had a significantly low 1/f noise parameter and a high universal bolometric parameter (beta). However, at the substrate temperature of 250 degrees C, the E-a, TCR and the 1/f noise values were increased due to increase of the resistivity. The TCR and the 1/f noise values are proportional to the resistivity of TiO2-x films. As a result, the low resistivity of TiO2-x sample deposited at 200 degrees C is a viable bolometric material for uncooled IR image sensors. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | THIN-FILMS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | AMORPHOUS-SILICON | - |
dc.subject | DEPOSITION RATE | - |
dc.subject | NOISE | - |
dc.title | Substrate temperature dependent bolometric properties of TiO2-x films for infrared image sensor applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000384784100090 | - |
dc.identifier.scopusid | 2-s2.0-85027918004 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.issue | 15 | - |
dc.citation.beginningpage | 17123 | - |
dc.citation.endingpage | 17127 | - |
dc.citation.publicationname | CERAMICS INTERNATIONAL | - |
dc.identifier.doi | 10.1016/j.ceramint.2016.07.225 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | TiO2-x film | - |
dc.subject.keywordAuthor | Substrate temperature | - |
dc.subject.keywordAuthor | Crystallinity | - |
dc.subject.keywordAuthor | Resistivity | - |
dc.subject.keywordAuthor | 1/f noise parameter | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | DEPOSITION RATE | - |
dc.subject.keywordPlus | NOISE | - |
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