DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhang, Yi | ko |
dc.contributor.author | Ugeda, Miguel M. | ko |
dc.contributor.author | Jin, Chenhao | ko |
dc.contributor.author | Shi, Su-Fei | ko |
dc.contributor.author | Bradley, Aaron J. | ko |
dc.contributor.author | Martin-Recio, Ana | ko |
dc.contributor.author | Ryu, Hyejin | ko |
dc.contributor.author | Kim, Jonghwan | ko |
dc.contributor.author | Tang, Shujie | ko |
dc.contributor.author | Kim, Yeong Kwan | ko |
dc.contributor.author | Zhou, Bo | ko |
dc.contributor.author | Hwang, Choongyu | ko |
dc.contributor.author | Chen, Yulin | ko |
dc.contributor.author | Wang, Feng | ko |
dc.contributor.author | Crommie, Michael F. | ko |
dc.contributor.author | Hussain, Zahid | ko |
dc.contributor.author | Shen, Zhi-Xun | ko |
dc.contributor.author | Mo, Sung-Kwan | ko |
dc.date.accessioned | 2016-11-09T06:34:34Z | - |
dc.date.available | 2016-11-09T06:34:34Z | - |
dc.date.created | 2016-10-25 | - |
dc.date.created | 2016-10-25 | - |
dc.date.created | 2016-10-25 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | NANO LETTERS, v.16, no.4, pp.2485 - 2491 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | http://hdl.handle.net/10203/213910 | - |
dc.description.abstract | High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | TRANSITION-METAL DICHALCOGENIDES | - |
dc.subject | P-N-JUNCTIONS | - |
dc.subject | 2-DIMENSIONAL MATERIALS | - |
dc.subject | MONOLAYER MOS2 | - |
dc.subject | MOLYBDENUM-DISULFIDE | - |
dc.subject | VALLEY POLARIZATION | - |
dc.subject | DIRECT BANDGAP | - |
dc.subject | SINGLE-LAYER | - |
dc.subject | SPIN | - |
dc.subject | STRAIN | - |
dc.title | Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films | - |
dc.type | Article | - |
dc.identifier.wosid | 000374274600053 | - |
dc.identifier.scopusid | 2-s2.0-84966267490 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 2485 | - |
dc.citation.endingpage | 2491 | - |
dc.citation.publicationname | NANO LETTERS | - |
dc.identifier.doi | 10.1021/acs.nanolett.6b00059 | - |
dc.contributor.localauthor | Kim, Yeong Kwan | - |
dc.contributor.nonIdAuthor | Zhang, Yi | - |
dc.contributor.nonIdAuthor | Ugeda, Miguel M. | - |
dc.contributor.nonIdAuthor | Jin, Chenhao | - |
dc.contributor.nonIdAuthor | Shi, Su-Fei | - |
dc.contributor.nonIdAuthor | Bradley, Aaron J. | - |
dc.contributor.nonIdAuthor | Martin-Recio, Ana | - |
dc.contributor.nonIdAuthor | Ryu, Hyejin | - |
dc.contributor.nonIdAuthor | Kim, Jonghwan | - |
dc.contributor.nonIdAuthor | Tang, Shujie | - |
dc.contributor.nonIdAuthor | Zhou, Bo | - |
dc.contributor.nonIdAuthor | Hwang, Choongyu | - |
dc.contributor.nonIdAuthor | Chen, Yulin | - |
dc.contributor.nonIdAuthor | Wang, Feng | - |
dc.contributor.nonIdAuthor | Crommie, Michael F. | - |
dc.contributor.nonIdAuthor | Hussain, Zahid | - |
dc.contributor.nonIdAuthor | Shen, Zhi-Xun | - |
dc.contributor.nonIdAuthor | Mo, Sung-Kwan | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Transition metal dichalcogenides | - |
dc.subject.keywordAuthor | WSe2 | - |
dc.subject.keywordAuthor | MBE | - |
dc.subject.keywordAuthor | ARPES | - |
dc.subject.keywordAuthor | STM/STS | - |
dc.subject.keywordAuthor | exciton binding energy | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | VALLEY POLARIZATION | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | DIRECT BANDGAP | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | SPIN | - |
dc.subject.keywordPlus | STRAIN | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | GROWTH | - |
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