Oxide-apertured photodetector integrated on vertical cavity surface emitting laser

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dc.contributor.authorHan, IYko
dc.contributor.authorSer, JHko
dc.contributor.authorRyu, HYko
dc.contributor.authorLee, Yong-Heeko
dc.date.accessioned2011-01-05T09:32:24Z-
dc.date.available2011-01-05T09:32:24Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1999-09-
dc.identifier.citationELECTRONICS LETTERS, v.35, no.20, pp.1742 - 1743-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/21390-
dc.description.abstractThe authors have designed and fabricated oxide-apertured photodetectors Integrated with vertical cavity surface emitting lasers (VCSELs). The photocurrent originating from spontaneous emission is suppressed by more than a factor of 10 in this integrated photodetector owing to the use of nonradiative recombination at the GaAs/oxide interface. In addition, the unavoidable internal loss from the detector is minimised by locating the GaAs detection layer as far as possible from the VCSEL cavity.-
dc.description.sponsorshipThe authors are grateful to K.H. Ha for helpful discussion, to H.W. Choi for deutron implantation, and to Samsung for the VCSEL wafer.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEE-INST ELEC ENG-
dc.subjectRECOMBINATION-
dc.subjectINTERFACE-
dc.titleOxide-apertured photodetector integrated on vertical cavity surface emitting laser-
dc.typeArticle-
dc.identifier.wosid000083436800043-
dc.identifier.scopusid2-s2.0-0033193591-
dc.type.rimsART-
dc.citation.volume35-
dc.citation.issue20-
dc.citation.beginningpage1742-
dc.citation.endingpage1743-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorHan, IY-
dc.contributor.nonIdAuthorSer, JH-
dc.contributor.nonIdAuthorRyu, HY-
dc.type.journalArticleArticle-
dc.subject.keywordPlusRECOMBINATION-
dc.subject.keywordPlusINTERFACE-
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