TEMPERATURE-DEPENDENCE OF MINORITY-CARRIER MOBILITY AND RECOMBINATION TIME IN P-TYPE GAAS

Abstract

The electron mobility in p-type GaAs, mu-e(p), has been determined as a function of temperature by measuring the common-emitter cutoff frequency, f(T), of an AlGaAs/GaAs n-p-n heterojunction bipolar transistor. The base was 0.6-mu-m thick and it was doped with 4 X 10(18) cm-3 Be. The 300 K value of 1055 cm2/V s and 79 K value of 5000 cm2/V s for mu-e(p) are comparable to the previously measured values. The discrepancy with the calculated values is pointed out. The recombination lifetime is also measured as a function of temperature for minority carriers. The results agree reasonably well with the calculated radiative recombination time.