DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kwyro | ko |
dc.contributor.author | Shur, M.S. | ko |
dc.date.accessioned | 2011-01-04T02:34:51Z | - |
dc.date.available | 2011-01-04T02:34:51Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1982-04 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES, v.1, no.2, pp.186 - 189 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/21341 | - |
dc.description.abstract | Modulation-doped FETS grown by MBE exhibit very high currents and transconductances per unit gate width. In short gate FETs the high transconductances are a result of large electron velocities; typically 2 multiplied by 10**7 cm/s at 77 K. Since the low field mobility does not strongly affect device performance, improvements were obtained by adjusting the parameters of the heterostructure to maximize charge transfer across the heterojunction. An improved calculation of the maximum charge transfer is used to derive closed expressions for the maximum current and transconductance. Predictions of increasing current and transconductance as the undoped (Al,Ga)As spacer layer thickness is decreased have been verified by experimental results. | - |
dc.description.sponsorship | The work at the University of Illinois is funded by the Air Force Office of Scientific Research and the Joint Services Electronics Program. The work at the University of Minnesota is partially funded by the Army Research Office and the Microelectronic and Information Sciences Center at the University of Minnesota. The authors would like to express their thanks to Dr.E.Hall and Dr.H.Goronkin and Mr.T.Miers of Motorola for providing the FET masks. The technical assistance of J.Klem and D.Arnold is greatly appreciated. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | AVS Science and Technology Society | - |
dc.title | DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (Al,Ga)As/GaAs FETS. | - |
dc.type | Article | - |
dc.identifier.scopusid | 2-s2.0-0020115534 | - |
dc.type.rims | ART | - |
dc.citation.volume | 1 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 186 | - |
dc.citation.endingpage | 189 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B: MICROELECTRONICS AND NANOMETER STRUCTURES | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Kwyro | - |
dc.contributor.nonIdAuthor | Shur, M.S. | - |
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