Effect of Electron-Beam Irradiation on Organic Semiconductor and Its Application for Transistor-Based Dosimeters

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The effects of electron-beam irradiation on the organic semiconductor rubrene and its application as a dosimeter was investigated. Through the measurements of photoluminescence and the ultraviolet photoelectron spectroscopy, we found that electron-beam irradiation induces n-doping of rubrene. Additionally, we fabricated rubrene thin-film transistors with pristine and irradiated rubrene, and discovered that the decrease in transistor properties originated from the irradiation of rubrene and that the threshold voltages are shifted to the opposite directions as the irradiated layers. Finally, a highly sensitive and air-stable electron dosimeter was fabricated based on a rubrene transistor
Publisher
AMER CHEMICAL SOC
Issue Date
2016-08
Language
English
Article Type
Article
Keywords

RUBRENE THIN-FILMS; RADIATION DETECTORS; SINGLE-CRYSTALS; POLYSTYRENE; DAMAGE

Citation

ACS APPLIED MATERIALS & INTERFACES, v.8, no.30, pp.19192 - 19196

ISSN
1944-8244
DOI
10.1021/acsami.6b05555
URI
http://hdl.handle.net/10203/213231
Appears in Collection
NE-Journal Papers(저널논문)
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