Multilevel Resistive Switching Memory using Solution Process with Two-dimensional (2D) Materials

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dc.contributor.authorShin, Gwang Hyukko
dc.contributor.authorBang, Gyeong Sookko
dc.contributor.authorJang, Byung Chulko
dc.contributor.authorWoo, Myung Hunko
dc.contributor.authorChoi, Sung Yoolko
dc.date.accessioned2016-10-04T07:28:27Z-
dc.date.available2016-10-04T07:28:27Z-
dc.date.created2016-09-19-
dc.date.created2016-09-19-
dc.date.issued2016-07-14-
dc.identifier.citationNANO KOREA 2016-
dc.identifier.urihttp://hdl.handle.net/10203/213110-
dc.languageEnglish-
dc.publisherNANO KOREA 2016-
dc.titleMultilevel Resistive Switching Memory using Solution Process with Two-dimensional (2D) Materials-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameNANO KOREA 2016-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationKINTEX 제2전시장7,8홀-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Sung Yool-
dc.contributor.nonIdAuthorWoo, Myung Hun-
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EE-Conference Papers(학술회의논문)
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