DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Hamin | ko |
dc.contributor.author | Park, Ick Joon | ko |
dc.contributor.author | Jung, Dae Yool | ko |
dc.contributor.author | Lee, Khang June | ko |
dc.contributor.author | Yang, Sang Yoon | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2016-09-08T00:50:48Z | - |
dc.date.available | 2016-09-08T00:50:48Z | - |
dc.date.created | 2016-03-25 | - |
dc.date.created | 2016-03-25 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | 2D MATERIALS, v.3, no.2, pp.021003 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212927 | - |
dc.description.abstract | We propose a polymer-free graphene transfer technique for chemical vapor deposition-grown graphene to ensure the intrinsic electrical properties of graphene for reliable transistor applications. The use of a metal catalyst as a supporting layer avoids contamination from the polymer material and graphene films become free of polymer residue after the transfer process. Atomic force microscopy and Raman spectroscopy indicate that the polymer-free transferred graphene shows closer properties to intrinsic graphene properties. The reliability of graphene field-effect transistors (GFETs) was investigated through the analysis of the negative gate bias-stress-induced instability. This work reveals the effect of polymer residues on the reliability of GFETs, and that the developed new polymer-free transfer method enhances the reliability. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000378571400003 | - |
dc.identifier.scopusid | 2-s2.0-84977633060 | - |
dc.type.rims | ART | - |
dc.citation.volume | 3 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 021003 | - |
dc.citation.publicationname | 2D MATERIALS | - |
dc.identifier.doi | 10.1088/2053-1583/3/2/021003 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | graphene transfer | - |
dc.subject.keywordAuthor | PMMA residue | - |
dc.subject.keywordAuthor | graphene field-effect transistor | - |
dc.subject.keywordAuthor | bias-stress-induced instability | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | SIZE | - |
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