DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sang Hun | ko |
dc.contributor.author | Park, Chang Young | ko |
dc.contributor.author | You, Jang-Woo | ko |
dc.contributor.author | Yoon, Heesun | ko |
dc.contributor.author | Cho, Yong-Chul | ko |
dc.contributor.author | Park, Yong-Hwa | ko |
dc.date.accessioned | 2016-09-07T02:44:51Z | - |
dc.date.available | 2016-09-07T02:44:51Z | - |
dc.date.created | 2016-08-24 | - |
dc.date.created | 2016-08-24 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.citation | SENSORS AND ACTUATORS A-PHYSICAL, v.197, pp.47 - 52 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212686 | - |
dc.description.abstract | The paper relates to a transmissive electro-absorption modulator and a method of fabricating the optical modulator for 3D image capturing system. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of high-speed optical shuttering. A 20 MHz-switching high speed optical shutter is realized by GaAs based multi-layer design with electro-absorption layers combining with optical resonance cavity and GaAs micromachining based on the etching process. Thick InGaP (4 lambda) layer was chosen for the transmissive membrane structure and etch-stop of GaAs wet etching. This layer also was n-type doped to enhance the electrical contact resistance. The transmissive window area is divided into 28 cells for a low device capacitance and a high switching speed, and the polyimide layer with low dielectric constant is embedded between p-pad and n-pad to reduce the leakage and parasitic capacitance. As a result, 49.5% of transmittance variation and above 37.7 MHz of switching speed are obtained to guarantee the functionality of Time-of-Flight operation of 3D camera. (c) 2013 Elsevier B.V. All rights reserved | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | EPITAXIAL LIFT-OFF | - |
dc.subject | QUANTUM-WELL | - |
dc.title | 850 nm IR transmissive electro-absorption modulator using GaAs micromachining | - |
dc.type | Article | - |
dc.identifier.wosid | 000320416100007 | - |
dc.identifier.scopusid | 2-s2.0-84877338912 | - |
dc.type.rims | ART | - |
dc.citation.volume | 197 | - |
dc.citation.beginningpage | 47 | - |
dc.citation.endingpage | 52 | - |
dc.citation.publicationname | SENSORS AND ACTUATORS A-PHYSICAL | - |
dc.identifier.doi | 10.1016/j.sna.2013.04.009 | - |
dc.contributor.localauthor | Park, Yong-Hwa | - |
dc.contributor.nonIdAuthor | Lee, Sang Hun | - |
dc.contributor.nonIdAuthor | Park, Chang Young | - |
dc.contributor.nonIdAuthor | You, Jang-Woo | - |
dc.contributor.nonIdAuthor | Yoon, Heesun | - |
dc.contributor.nonIdAuthor | Cho, Yong-Chul | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Electro-absorption modulator | - |
dc.subject.keywordAuthor | GaAs micromachining | - |
dc.subject.keywordAuthor | InGaP | - |
dc.subject.keywordAuthor | IR transmissive device | - |
dc.subject.keywordPlus | EPITAXIAL LIFT-OFF | - |
dc.subject.keywordPlus | QUANTUM-WELL | - |
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