850 nm IR transmissive electro-absorption modulator using GaAs micromachining

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dc.contributor.authorLee, Sang Hunko
dc.contributor.authorPark, Chang Youngko
dc.contributor.authorYou, Jang-Wooko
dc.contributor.authorYoon, Heesunko
dc.contributor.authorCho, Yong-Chulko
dc.contributor.authorPark, Yong-Hwako
dc.date.accessioned2016-09-07T02:44:51Z-
dc.date.available2016-09-07T02:44:51Z-
dc.date.created2016-08-24-
dc.date.created2016-08-24-
dc.date.issued2013-08-
dc.identifier.citationSENSORS AND ACTUATORS A-PHYSICAL, v.197, pp.47 - 52-
dc.identifier.issn0924-4247-
dc.identifier.urihttp://hdl.handle.net/10203/212686-
dc.description.abstractThe paper relates to a transmissive electro-absorption modulator and a method of fabricating the optical modulator for 3D image capturing system. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of high-speed optical shuttering. A 20 MHz-switching high speed optical shutter is realized by GaAs based multi-layer design with electro-absorption layers combining with optical resonance cavity and GaAs micromachining based on the etching process. Thick InGaP (4 lambda) layer was chosen for the transmissive membrane structure and etch-stop of GaAs wet etching. This layer also was n-type doped to enhance the electrical contact resistance. The transmissive window area is divided into 28 cells for a low device capacitance and a high switching speed, and the polyimide layer with low dielectric constant is embedded between p-pad and n-pad to reduce the leakage and parasitic capacitance. As a result, 49.5% of transmittance variation and above 37.7 MHz of switching speed are obtained to guarantee the functionality of Time-of-Flight operation of 3D camera. (c) 2013 Elsevier B.V. All rights reserved-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectEPITAXIAL LIFT-OFF-
dc.subjectQUANTUM-WELL-
dc.title850 nm IR transmissive electro-absorption modulator using GaAs micromachining-
dc.typeArticle-
dc.identifier.wosid000320416100007-
dc.identifier.scopusid2-s2.0-84877338912-
dc.type.rimsART-
dc.citation.volume197-
dc.citation.beginningpage47-
dc.citation.endingpage52-
dc.citation.publicationnameSENSORS AND ACTUATORS A-PHYSICAL-
dc.identifier.doi10.1016/j.sna.2013.04.009-
dc.contributor.localauthorPark, Yong-Hwa-
dc.contributor.nonIdAuthorLee, Sang Hun-
dc.contributor.nonIdAuthorPark, Chang Young-
dc.contributor.nonIdAuthorYou, Jang-Woo-
dc.contributor.nonIdAuthorYoon, Heesun-
dc.contributor.nonIdAuthorCho, Yong-Chul-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorElectro-absorption modulator-
dc.subject.keywordAuthorGaAs micromachining-
dc.subject.keywordAuthorInGaP-
dc.subject.keywordAuthorIR transmissive device-
dc.subject.keywordPlusEPITAXIAL LIFT-OFF-
dc.subject.keywordPlusQUANTUM-WELL-
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