850 nm IR transmissive electro-absorption modulator using GaAs micromachining

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The paper relates to a transmissive electro-absorption modulator and a method of fabricating the optical modulator for 3D image capturing system. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of high-speed optical shuttering. A 20 MHz-switching high speed optical shutter is realized by GaAs based multi-layer design with electro-absorption layers combining with optical resonance cavity and GaAs micromachining based on the etching process. Thick InGaP (4 lambda) layer was chosen for the transmissive membrane structure and etch-stop of GaAs wet etching. This layer also was n-type doped to enhance the electrical contact resistance. The transmissive window area is divided into 28 cells for a low device capacitance and a high switching speed, and the polyimide layer with low dielectric constant is embedded between p-pad and n-pad to reduce the leakage and parasitic capacitance. As a result, 49.5% of transmittance variation and above 37.7 MHz of switching speed are obtained to guarantee the functionality of Time-of-Flight operation of 3D camera. (c) 2013 Elsevier B.V. All rights reserved
Publisher
ELSEVIER SCIENCE SA
Issue Date
2013-08
Language
English
Article Type
Article
Keywords

EPITAXIAL LIFT-OFF; QUANTUM-WELL

Citation

SENSORS AND ACTUATORS A-PHYSICAL, v.197, pp.47 - 52

ISSN
0924-4247
DOI
10.1016/j.sna.2013.04.009
URI
http://hdl.handle.net/10203/212686
Appears in Collection
ME-Journal Papers(저널논문)
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