We report growth and angle resolved photoemission studies of Cu intercalated NbSe2. CuxNbSe2 with x=0, 0.04 and 0.08 were grown by iodine vapor transport method. Intercalation and doping was confirmed by the change in the c-axis lattice constant and the change in the electronic structure, respectively. To investigate the nesting condition, we performed auto-correlation analysis on the data. We find that the magnitude of the nesting vector decreases with doping but the direction remains unchanged. Our observation is consistent with the nesting coming from intra-pocket transition. (C) 2010 Published by Elsevier Ltd