DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Gwang-Sik | ko |
dc.contributor.author | Yoo, Gwangwe | ko |
dc.contributor.author | Seo, Yujin | ko |
dc.contributor.author | Kim, Seung-Hwan | ko |
dc.contributor.author | Cho, Karam | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.contributor.author | Shin, Changhwan | ko |
dc.contributor.author | Park, Jin-Hong | ko |
dc.contributor.author | Yu, Hyun-Yong | ko |
dc.date.accessioned | 2016-09-07T01:44:13Z | - |
dc.date.available | 2016-09-07T01:44:13Z | - |
dc.date.created | 2016-06-13 | - |
dc.date.created | 2016-06-13 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212573 | - |
dc.description.abstract | The effect of post-deposition H-2 annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity (rho(c)) of 3.4x10(-4) Omega . cm(2) was achieved on a moderately doped n-Ge substrate (1x10(17) cm(-3)), whereby 5900x reduction was exhibited from the Ti/n-Ge structure, and a 10x reduction was achieved from the Ti/Ar plasma-treated TiO2-x/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | PLASMA | - |
dc.subject | RESISTIVITY | - |
dc.subject | ARRAYS | - |
dc.subject | GE | - |
dc.title | Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure | - |
dc.type | Article | - |
dc.identifier.wosid | 000379934100005 | - |
dc.identifier.scopusid | 2-s2.0-84971375780 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 709 | - |
dc.citation.endingpage | 712 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2016.2558582 | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Gwang-Sik | - |
dc.contributor.nonIdAuthor | Yoo, Gwangwe | - |
dc.contributor.nonIdAuthor | Kim, Seung-Hwan | - |
dc.contributor.nonIdAuthor | Cho, Karam | - |
dc.contributor.nonIdAuthor | Shin, Changhwan | - |
dc.contributor.nonIdAuthor | Park, Jin-Hong | - |
dc.contributor.nonIdAuthor | Yu, Hyun-Yong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Contact resistance | - |
dc.subject.keywordAuthor | Fermi-level unpinning | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | post-deposition hydrogen annealing | - |
dc.subject.keywordAuthor | source/drain | - |
dc.subject.keywordAuthor | titanium dioxide | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | GE | - |
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