Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

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dc.contributor.authorAhn, Juhanko
dc.contributor.authorKim, Jeong-Kyuko
dc.contributor.authorKim, Sun-Wooko
dc.contributor.authorKim, Gwang-Sikko
dc.contributor.authorShin, Changhwanko
dc.contributor.authorKim, Jong-Kookko
dc.contributor.authorCho, Byung-Jinko
dc.contributor.authorYu, Hyun-Yongko
dc.date.accessioned2016-09-07T01:44:07Z-
dc.date.available2016-09-07T01:44:07Z-
dc.date.created2016-06-13-
dc.date.created2016-06-13-
dc.date.issued2016-06-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.705 - 708-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/212572-
dc.description.abstractA metal nitride-interlayer-semiconductor source/drain (MN-I-S S/D) model is newly proposed to investigate the effect of tantalum nitride (TaN) on the specific contact resistivity (rho(c)) of an MN-I-S S/D with an undoped interlayer (undoped-IL) or a heavily doped IL (n(+)-IL) in sub-10-nm n-type Ge FinFETs. In this model, the workfunction variation of TaN was considered following the Rayleigh distribution. Compared with MN-I-S structures with an undoped-IL, structures with an n(+)-IL generate much lower rho(c) values (i.e., similar to 2 x 10(-9) Omega . cm(2)) and are less prone to variation. In addition, the impact of rho(c) variation on device performance is investigated using 3-D technology computer aided design simulation for undoped or heavily doped ILs in MN-I-S S/D structures. MN-I-S S/Ds with an n(+)-IL can achieve much lower current variation and a higher ON-state drive current.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectWORK-FUNCTION VARIATION-
dc.subjectINTERFACIAL LAYER-
dc.subjectGERMANIDE-
dc.titleEffect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET-
dc.typeArticle-
dc.identifier.wosid000379934100004-
dc.identifier.scopusid2-s2.0-84971492637-
dc.type.rimsART-
dc.citation.volume37-
dc.citation.issue6-
dc.citation.beginningpage705-
dc.citation.endingpage708-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2016.2553132-
dc.contributor.localauthorCho, Byung-Jin-
dc.contributor.nonIdAuthorAhn, Juhan-
dc.contributor.nonIdAuthorKim, Jeong-Kyu-
dc.contributor.nonIdAuthorKim, Sun-Woo-
dc.contributor.nonIdAuthorKim, Gwang-Sik-
dc.contributor.nonIdAuthorShin, Changhwan-
dc.contributor.nonIdAuthorKim, Jong-Kook-
dc.contributor.nonIdAuthorYu, Hyun-Yong-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorFinFET-
dc.subject.keywordAuthorgermanium-
dc.subject.keywordAuthorinterlayer-
dc.subject.keywordAuthorspecific contact resistivity-
dc.subject.keywordAuthortantalum nitride-
dc.subject.keywordAuthorvariation-
dc.subject.keywordAuthorworkfunction-
dc.subject.keywordAuthorzinc oxide-
dc.subject.keywordPlusWORK-FUNCTION VARIATION-
dc.subject.keywordPlusINTERFACIAL LAYER-
dc.subject.keywordPlusGERMANIDE-
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