DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seung-Yoon | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2016-09-07T01:43:30Z | - |
dc.date.available | 2016-09-07T01:43:30Z | - |
dc.date.created | 2016-06-21 | - |
dc.date.created | 2016-06-21 | - |
dc.date.created | 2016-06-21 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v.6, pp.29354 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10203/212565 | - |
dc.description.abstract | Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from ultra-thin-body silicon are the two main mechanisms for valley engineering. These were obtained from the extremely well-controlled silicon surface roughness and high tensile strain in silicon, thereupon demonstrating a device mobility increase of similar to 500% in a 2.5 nm thick silicon channel device. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Valley-engineered ultra-thin silicon for high-performance junctionless transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000379242200001 | - |
dc.identifier.scopusid | 2-s2.0-84978168289 | - |
dc.type.rims | ART | - |
dc.citation.volume | 6 | - |
dc.citation.beginningpage | 29354 | - |
dc.citation.publicationname | SCIENTIFIC REPORTS | - |
dc.identifier.doi | 10.1038/srep29354 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | QUANTUM CONFINEMENT | - |
dc.subject.keywordPlus | GRAPHENE | - |
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