Graphene oxide-templated preferential growth of continuous MOF thin films
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Daeok | ko |
| dc.contributor.author | Coskun, Ali | ko |
| dc.date.accessioned | 2016-07-25T09:41:14Z | - |
| dc.date.available | 2016-07-25T09:41:14Z | - |
| dc.date.created | 2016-07-12 | - |
| dc.date.created | 2016-07-12 | - |
| dc.date.created | 2016-07-12 | - |
| dc.date.created | 2016-07-12 | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | CRYSTENGCOMM, v.18, no.22, pp.4013 - 4017 | - |
| dc.identifier.issn | 1466-8033 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/212170 | - |
| dc.description.abstract | We introduced a new strategy to fabricate defect-free continuous metal-organic framework (MOF) films using graphene oxide (GO) as an interfacial template on solid substrates. The unprecedented formation of a one-dimensional nanorod-shaped crystalline intermediate phase on the GO surface enabled the preferential growth of HKUST-1 films in the < 220 > direction | - |
| dc.language | English | - |
| dc.publisher | ROYAL SOC CHEMISTRY | - |
| dc.title | Graphene oxide-templated preferential growth of continuous MOF thin films | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000378005600006 | - |
| dc.identifier.scopusid | 2-s2.0-84973333865 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 18 | - |
| dc.citation.issue | 22 | - |
| dc.citation.beginningpage | 4013 | - |
| dc.citation.endingpage | 4017 | - |
| dc.citation.publicationname | CRYSTENGCOMM | - |
| dc.identifier.doi | 10.1039/c5ce02188j | - |
| dc.contributor.localauthor | Coskun, Ali | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | METAL-ORGANIC FRAMEWORKS | - |
| dc.subject.keywordPlus | RAPID FABRICATION | - |
| dc.subject.keywordPlus | ENERGY-TRANSFER | - |
| dc.subject.keywordPlus | MEMBRANES | - |
| dc.subject.keywordPlus | REDUCTION | - |
| dc.subject.keywordPlus | SEPARATION | - |
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