DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Hoon | ko |
dc.contributor.author | Nam, Dukyun | ko |
dc.contributor.author | Ahn, Bu-Young | ko |
dc.contributor.author | Lee, JongSuk Ruth | ko |
dc.contributor.author | Cho, Kumwon | ko |
dc.contributor.author | Lee, Sunhee | ko |
dc.contributor.author | Klimeck, Gerhard | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2016-07-25T08:30:08Z | - |
dc.date.available | 2016-07-25T08:30:08Z | - |
dc.date.created | 2013-10-04 | - |
dc.date.created | 2013-10-04 | - |
dc.date.created | 2013-10-04 | - |
dc.date.issued | 2013-07 | - |
dc.identifier.citation | MATHEMATICAL AND COMPUTER MODELLING, v.58, no.1-2, pp.288 - 299 | - |
dc.identifier.issn | 0895-7177 | - |
dc.identifier.uri | http://hdl.handle.net/10203/211904 | - |
dc.description.abstract | A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III-V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2-1.5 mu m. We not only present a detailed description of the simulation methodology coupled to the atomistic sp(3)d(5)s* tight-binding band model, but also validate the suggested methodology with a focus on a proof of principle on small GaAs quantum dots (QDs). Then, we move the simulation scope to optical properties of realistically sized dome-shaped InAs/GaAs QDs that are grown by self-assembly and typically contain a few million atoms. Performing numerical experiments with a variation in QD size, we not only show that the strength of ground state inter-band light transitions can be optimized via QD size-engineering, but also find that the hole ground state wavefunction serves as a control factor of transition strengths. Finally, we briefly introduce the web-based cyber infrastructure that is developed as a government-funded project to support online education and research via TCAD simulations. This work not only serves as a useful guideline to experimentalists for potential device designs and other modelers for the self-development of optical TCAD, but also provides a good chance to learn about the science gateway project ongoing in the Republic of Korea. (C) 2012 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors | - |
dc.type | Article | - |
dc.identifier.wosid | 000320601000030 | - |
dc.identifier.scopusid | 2-s2.0-84878525578 | - |
dc.type.rims | ART | - |
dc.citation.volume | 58 | - |
dc.citation.issue | 1-2 | - |
dc.citation.beginningpage | 288 | - |
dc.citation.endingpage | 299 | - |
dc.citation.publicationname | MATHEMATICAL AND COMPUTER MODELLING | - |
dc.identifier.doi | 10.1016/j.mcm.2012.11.024 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Ryu, Hoon | - |
dc.contributor.nonIdAuthor | Nam, Dukyun | - |
dc.contributor.nonIdAuthor | Ahn, Bu-Young | - |
dc.contributor.nonIdAuthor | Lee, JongSuk Ruth | - |
dc.contributor.nonIdAuthor | Cho, Kumwon | - |
dc.contributor.nonIdAuthor | Lee, Sunhee | - |
dc.contributor.nonIdAuthor | Klimeck, Gerhard | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Optoelectronics | - |
dc.subject.keywordAuthor | Tight-binding | - |
dc.subject.keywordAuthor | Atomistic modeling | - |
dc.subject.keywordAuthor | III-V photodetector | - |
dc.subject.keywordAuthor | Parallel computing | - |
dc.subject.keywordAuthor | Science gateway | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | NEMO 3-D | - |
dc.subject.keywordPlus | SCIENCE | - |
dc.subject.keywordPlus | ATOM | - |
dc.subject.keywordPlus | SIMULATIONS | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | GATEWAYS | - |
dc.subject.keywordPlus | GAAS | - |
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