Finite-size supercell correction scheme for the formation energy of charged defects in silicon nanowire

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dc.contributor.authorKim, Sung Hyun-
dc.contributor.authorPark, Ji Sang-
dc.contributor.authorChang, Kee Joo-
dc.date.accessioned2016-07-13T01:59:13Z-
dc.date.available2016-07-13T01:59:13Z-
dc.date.created2015-12-29-
dc.date.issued2015-07-
dc.identifier.citation2015 28th International Conference on Defects in Semiconductors-
dc.identifier.urihttp://hdl.handle.net/10203/210804-
dc.languageEnglish-
dc.publisherICDS-
dc.titleFinite-size supercell correction scheme for the formation energy of charged defects in silicon nanowire-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname2015 28th International Conference on Defects in Semiconductors-
dc.identifier.conferencecountryFI-
dc.identifier.conferencelocationAalto University-
dc.contributor.localauthorKim, Sung Hyun-
dc.contributor.localauthorPark, Ji Sang-
dc.contributor.localauthorChang, Kee Joo-
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PH-Conference Papers(학술회의논문)
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