Atomistic Simulation of InAs Tunnel FETs based on TB-NEGF Method

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Publisher
성균관대학교,한국반도체산업협회,한국반도체연구조합
Issue Date
2016-02-23
Language
English
Citation

제23회 반도체 학술대회

URI
http://hdl.handle.net/10203/209269
Appears in Collection
EE-Conference Papers(학술회의논문)
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