DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Byung Chul | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Kim, Jong Yun | ko |
dc.contributor.author | Koo, Beom Jun | ko |
dc.contributor.author | Kim, Sung Kyu | ko |
dc.contributor.author | Yang, Sang Yoon | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2016-07-05T08:03:36Z | - |
dc.date.available | 2016-07-05T08:03:36Z | - |
dc.date.created | 2016-05-02 | - |
dc.date.created | 2016-05-02 | - |
dc.date.issued | 2016-04-21 | - |
dc.identifier.citation | Graphene 2016 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209258 | - |
dc.language | English | - |
dc.publisher | Graphene 2016 | - |
dc.title | Interface engineering by inserting multilayer graphene barrier electrode for low power and highly uniform polymer nonvolatile memory | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | Graphene 2016 | - |
dc.identifier.conferencecountry | IT | - |
dc.identifier.conferencelocation | Genoa’s Conference Center | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Jang, Byung Chul | - |
dc.contributor.nonIdAuthor | Seong, Hyejeong | - |
dc.contributor.nonIdAuthor | Kim, Jong Yun | - |
dc.contributor.nonIdAuthor | Koo, Beom Jun | - |
dc.contributor.nonIdAuthor | Kim, Sung Kyu | - |
dc.contributor.nonIdAuthor | Yang, Sang Yoon | - |
dc.contributor.nonIdAuthor | Im, Sung Gap | - |
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