Precise study of contact resistance lowering mechanism in MoS2 FET with refined resistance network model
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jihun | ko |
| dc.contributor.author | Woo, Youngjun | ko |
| dc.contributor.author | Seo, Seung Bum | ko |
| dc.contributor.author | Choi, Sung Yool | ko |
| dc.date.accessioned | 2016-07-04T02:15:38Z | - |
| dc.date.available | 2016-07-04T02:15:38Z | - |
| dc.date.created | 2016-05-02 | - |
| dc.date.created | 2016-05-02 | - |
| dc.date.issued | 2016-04-14 | - |
| dc.identifier.citation | 제3회 한국 그래핀 심포지엄 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/208938 | - |
| dc.language | Korean | - |
| dc.publisher | 한국그래핀연구회 | - |
| dc.title | Precise study of contact resistance lowering mechanism in MoS2 FET with refined resistance network model | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제3회 한국 그래핀 심포지엄 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 부여(롯데리조트) | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Choi, Sung Yool | - |
| dc.contributor.nonIdAuthor | Park, Jihun | - |
| dc.contributor.nonIdAuthor | Woo, Youngjun | - |
| dc.contributor.nonIdAuthor | Seo, Seung Bum | - |
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