Effect of sputtering pressure on microstructure and bolometric properties of Nb: TiO2-x films for infrared image sensor applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Reddy, Y. Ashok Kumar | ko |
| dc.contributor.author | Shin, Young Bong | ko |
| dc.contributor.author | Kang, In-Ku | ko |
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.date.accessioned | 2016-06-28T02:04:53Z | - |
| dc.date.available | 2016-06-28T02:04:53Z | - |
| dc.date.created | 2016-03-08 | - |
| dc.date.created | 2016-03-08 | - |
| dc.date.issued | 2016-01 | - |
| dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.119, no.4 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/208012 | - |
| dc.description.abstract | This study aims to investigate the influence of the sputtering pressure (PS) on Nb:TiO2-x films to enhance the bolometric properties. A decrease in the growth rate with the sputtering pressure was perceived in amorphous Nb:TiO2-x films. The incorporation of oxygen with PS was confirmed in an X-ray photo electron spectroscopy analysis. The electrical resistivity was increased with an increase in PS due to a decrease in the number of oxygen vacancies. The linear I-V characteristics confirmed the ohmic contact behavior between the Nb:TiO2-x layer and the electrode material. The present investigation finds that the sample with lower resistivity has good bolometric properties with low noise and high universal bolometric parameters. Finally, the Nb:TiO2-x sample deposited at a sputtering pressure of 2 mTorr shows better bolometric properties than other materials for infrared image sensor applications. | - |
| dc.language | English | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | THIN-FILMS | - |
| dc.subject | DOPED TIO2 | - |
| dc.subject | DEPOSITION | - |
| dc.title | Effect of sputtering pressure on microstructure and bolometric properties of Nb: TiO2-x films for infrared image sensor applications | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000369896300023 | - |
| dc.identifier.scopusid | 2-s2.0-84956645764 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 119 | - |
| dc.citation.issue | 4 | - |
| dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
| dc.identifier.doi | 10.1063/1.4940957 | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | DOPED TIO2 | - |
| dc.subject.keywordPlus | DEPOSITION | - |
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