DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Bongsik | ko |
dc.contributor.author | Lee, Dongil | ko |
dc.contributor.author | Ahn, Jae-Hyuk | ko |
dc.contributor.author | Yoon, Jinsu | ko |
dc.contributor.author | Lee, Juhee | ko |
dc.contributor.author | Jeon, Minsu | ko |
dc.contributor.author | Kim, Dong Myong | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.contributor.author | Park, Inkyu | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.date.accessioned | 2016-05-16T08:54:07Z | - |
dc.date.available | 2016-05-16T08:54:07Z | - |
dc.date.created | 2015-11-22 | - |
dc.date.created | 2015-11-22 | - |
dc.date.created | 2015-11-22 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.107, no.19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/207509 | - |
dc.description.abstract | The work function of palladium (Pd) is known to be sensitive to hydrogen (H-2) via the formation of a surface dipole layer or Pd hydride. One approach to detect such a change in the work function is based on the formation of a Schottky barrier between Pd and a semiconductor. Here, we demonstrate a H-2 sensor operable at room temperature by assembling solution-processed, pre-separated semiconducting single-walled carbon nanotube (SWNT) network bridged by Pd source/drain (S/D) electrodes in a configuration of field-effect transistors (FETs) with a local back-gate electrode. To begin with, we observed that the H-2 response of the fabricated SWNT FETs can be enhanced in the linear operating regime, where the change in the work function of the Pd S/D electrodes by H2 can be effectively detected. We also explore the H-2 responses in various SWNT FETs with different physical dimensions to optimize the sensing performance. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Investigation of optimal hydrogen sensing performance in semiconducting carbon nanotube network transistors with palladium electrodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000365041300058 | - |
dc.identifier.scopusid | 2-s2.0-84947461259 | - |
dc.type.rims | ART | - |
dc.citation.volume | 107 | - |
dc.citation.issue | 19 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.4935610 | - |
dc.contributor.localauthor | Park, Inkyu | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Choi, Bongsik | - |
dc.contributor.nonIdAuthor | Lee, Dongil | - |
dc.contributor.nonIdAuthor | Yoon, Jinsu | - |
dc.contributor.nonIdAuthor | Lee, Juhee | - |
dc.contributor.nonIdAuthor | Jeon, Minsu | - |
dc.contributor.nonIdAuthor | Kim, Dong Myong | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
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