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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Journal Papers(저널논문)

TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS

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dc.contributor.authorTELL, Bko
dc.contributor.authorBROWNGOEBELER, KFko
dc.contributor.authorLEIBENGUTH, REko
dc.contributor.authorBAEZ, FMko
dc.contributor.authorLee, Yong-Heeko
dc.date.accessioned2010-12-03T08:06:04Z-
dc.date.available2010-12-03T08:06:04Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1992-02-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.60, no.6, pp.683 - 685-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/20694-
dc.description.abstractThe temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum.-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.titleTEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS-
dc.typeArticle-
dc.identifier.wosidA1992HC82000007-
dc.identifier.scopusid2-s2.0-36449003470-
dc.type.rimsART-
dc.citation.volume60-
dc.citation.issue6-
dc.citation.beginningpage683-
dc.citation.endingpage685-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.106536-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Yong-Hee-
dc.contributor.nonIdAuthorTELL, B-
dc.contributor.nonIdAuthorBROWNGOEBELER, KF-
dc.contributor.nonIdAuthorLEIBENGUTH, RE-
dc.contributor.nonIdAuthorBAEZ, FM-
dc.type.journalArticleArticle-
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