A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis

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dc.contributor.authorPark, Beomjinko
dc.contributor.authorPark, Jaesungko
dc.contributor.authorSon, Jin Gyeongko
dc.contributor.authorKim, Yong-Jinko
dc.contributor.authorYu, Seong Ukko
dc.contributor.authorPark, Hyo Juko
dc.contributor.authorChae, Dong-Hunko
dc.contributor.authorByun, Jinseokko
dc.contributor.authorJeon, Gumhyeko
dc.contributor.authorHuh, Sungko
dc.contributor.authorLee, Seoung-Kiko
dc.contributor.authorMishchenko, Artemko
dc.contributor.authorHyun, Seungko
dc.contributor.authorLee, Tae Geolko
dc.contributor.authorHan, Sang Wooko
dc.contributor.authorAhn, Jong-Hyunko
dc.contributor.authorLee, Zonghoonko
dc.contributor.authorHwang, Chanyongko
dc.contributor.authorNovoselov, Konstantin S.ko
dc.contributor.authorKim, Kwang S.ko
dc.contributor.authorHong, Byung Heeko
dc.contributor.authorKim, Jin Konko
dc.date.accessioned2016-04-15T03:04:33Z-
dc.date.available2016-04-15T03:04:33Z-
dc.date.created2015-09-21-
dc.date.created2015-09-21-
dc.date.created2015-09-21-
dc.date.created2015-09-21-
dc.date.created2015-09-21-
dc.date.created2015-09-21-
dc.date.issued2015-08-
dc.identifier.citationACS NANO, v.9, no.8, pp.8352 - 8360-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10203/203945-
dc.description.abstractPrecise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.-
dc.languageEnglish-
dc.publisherAMER CHEMICAL SOC-
dc.titleA Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis-
dc.typeArticle-
dc.identifier.wosid000360323300064-
dc.identifier.scopusid2-s2.0-84940121912-
dc.type.rimsART-
dc.citation.volume9-
dc.citation.issue8-
dc.citation.beginningpage8352-
dc.citation.endingpage8360-
dc.citation.publicationnameACS NANO-
dc.identifier.doi10.1021/acsnano.5b03037-
dc.contributor.localauthorHan, Sang Woo-
dc.contributor.nonIdAuthorPark, Beomjin-
dc.contributor.nonIdAuthorPark, Jaesung-
dc.contributor.nonIdAuthorKim, Yong-Jin-
dc.contributor.nonIdAuthorYu, Seong Uk-
dc.contributor.nonIdAuthorPark, Hyo Ju-
dc.contributor.nonIdAuthorChae, Dong-Hun-
dc.contributor.nonIdAuthorByun, Jinseok-
dc.contributor.nonIdAuthorJeon, Gumhye-
dc.contributor.nonIdAuthorLee, Seoung-Ki-
dc.contributor.nonIdAuthorMishchenko, Artem-
dc.contributor.nonIdAuthorHyun, Seung-
dc.contributor.nonIdAuthorLee, Tae Geol-
dc.contributor.nonIdAuthorAhn, Jong-Hyun-
dc.contributor.nonIdAuthorLee, Zonghoon-
dc.contributor.nonIdAuthorHwang, Chanyong-
dc.contributor.nonIdAuthorNovoselov, Konstantin S.-
dc.contributor.nonIdAuthorKim, Kwang S.-
dc.contributor.nonIdAuthorHong, Byung Hee-
dc.contributor.nonIdAuthorKim, Jin Kon-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorgraphene-
dc.subject.keywordAuthoramorphous carbon-
dc.subject.keywordAuthorgraphene-based heterostructure-
dc.subject.keywordAuthorbottom-up growth-
dc.subject.keywordAuthorgraphene growth from polymer-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusGRAPHENE GROWTH-
dc.subject.keywordPlusAMORPHOUS-CARBON-
dc.subject.keywordPlusBORON-NITRIDE-
dc.subject.keywordPlusLARGE-AREA-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusELECTRONICS-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusGAS-
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