DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kyuseung | ko |
dc.contributor.author | Chae, Sooryong | ko |
dc.contributor.author | Jang, Jongjin | ko |
dc.contributor.author | Min, Daehong | ko |
dc.contributor.author | Kim, Jaehwan | ko |
dc.contributor.author | Eom, Daeyong | ko |
dc.contributor.author | Yoo, Yang-Seok | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Nam, Okhyun | ko |
dc.date.accessioned | 2016-04-14T02:52:03Z | - |
dc.date.available | 2016-04-14T02:52:03Z | - |
dc.date.created | 2015-09-07 | - |
dc.date.created | 2015-09-07 | - |
dc.date.created | 2015-09-07 | - |
dc.date.created | 2015-09-07 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | NANOTECHNOLOGY, v.26, no.33, pp.335601 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10203/203689 | - |
dc.description.abstract | In this study, we have intentionally grown novel types of (11-22)- and (1-10-3)-oriented(3) and self-assembled inclined GaN nanorods (NRs) on (10-10) m-sapphire substrates using metal organic chemical vapor deposition without catalysts and ex situ patterning. Nitridation of the m-sapphire surface was observed to be crucial to the inclined angle as well as the growth direction of the GaN NRs. Polarity-selective KOH etching confirmed that both (11-22) and (1-10-3) GaN NRs are nitrogen-polar. Using pole figure measurements and selective area electron diffraction patterns, the epitaxial relationship between the inclined (11-22) and (1-10-3) GaN NRs and m-sapphire substrates was systematically demonstrated. Furthermore, it was verified that the GaN NRs were single-crystalline wurtzite structures. We observed that stacking fault-related defects were generated during the initial growth stage using high-resolution transmission electron microscopy. The blue-shift of the near band edge (NBE) peak in the inclined angle-controlled GaN NRs can be explained by a band filling effect through carrier saturation of the conduction band, resulting from a high Si-doping concentration; in addition, the decay time of NBE emission in (11-22)- and (1-10-3)-oriented NRs was much shorter than that of stacking fault-related emission. These results suggest that defect-free inclined GaN NRs can be grown on m-sapphire without ex situ treatment. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst | - |
dc.type | Article | - |
dc.identifier.wosid | 000359078900007 | - |
dc.identifier.scopusid | 2-s2.0-84938304924 | - |
dc.type.rims | ART | - |
dc.citation.volume | 26 | - |
dc.citation.issue | 33 | - |
dc.citation.beginningpage | 335601 | - |
dc.citation.publicationname | NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1088/0957-4484/26/33/335601 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Lee, Kyuseung | - |
dc.contributor.nonIdAuthor | Chae, Sooryong | - |
dc.contributor.nonIdAuthor | Jang, Jongjin | - |
dc.contributor.nonIdAuthor | Min, Daehong | - |
dc.contributor.nonIdAuthor | Kim, Jaehwan | - |
dc.contributor.nonIdAuthor | Eom, Daeyong | - |
dc.contributor.nonIdAuthor | Nam, Okhyun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | nanorod | - |
dc.subject.keywordAuthor | orientation-control | - |
dc.subject.keywordAuthor | catalyst-free | - |
dc.subject.keywordAuthor | semipolar | - |
dc.subject.keywordAuthor | m-sapphire | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordPlus | SI-DOPED GAN | - |
dc.subject.keywordPlus | ORIENTATION CONTROL | - |
dc.subject.keywordPlus | PLANE SAPPHIRE | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | PHASE EPITAXY | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | NITRIDATION | - |
dc.subject.keywordPlus | FILM | - |
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