A Fully Integrated Triple-Band CMOS Class-E Power Amplifier With a Power Cell Resizing Technique and a Multi-Tap Transformer

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This letter presents a fully integrated triple-band CMOS class-E power amplifier (PA) for the 0.8/1.9/2.4 GHz frequencies. The operating frequency band is tuned by a power cell resizing technique and by changing the supply bias position with a multi-tap transformer for the required capacitance and inductance values for optimum class-E operation. The PA achieves output powers of 28/29.6/26.5 dBm and power-added efficiency of 40/45/37% at each frequency band. The PA is implemented in a 0.18 mu m CMOS process without multiple transformers or input/output matching networks. The total chip size is 1.5 x 1.5 mm(2).
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2013-12
Language
English
Article Type
Article
Keywords

WIRELESS APPLICATIONS; NETWORK

Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.23, no.12, pp.659 - 661

ISSN
1531-1309
DOI
10.1109/LMWC.2013.2283874
URI
http://hdl.handle.net/10203/202770
Appears in Collection
EE-Journal Papers(저널논문)
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