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Results 1-10 of 50 (Search time: 0.014 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1
Structure, magnetic and optical properties, and Hall effect of Co- and Fe-doped SnO2 films

Kim H.-S.; Bi L.; Dionne G.F.; Ross C.A.; Paik H.-J., PHYSICAL REVIEW B, v.77, no.21, 2008

2
Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier

Kwon J.-D.; Jeong S.-J.; Kang J.-W.; Kim D.-G.; Kim J.-K.; Rha J.-J.; Nam K.-S.; Kwon S.-H., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.11, pp.H832 - H835, 2009

3
Charging characteristics of Ru nanocrystals embedded in Al2O3 matrix prepared by using the initial growth stage of Ru plasma-enhanced atomic layer deposition

Kwack, Won-Sub; Choi, Hyun-Jin; Choi, Woo-Chang; Oh, Heung-Ryong; Shin, Seung-Yong; Moon, Kyoung Il; Kwak, Ji-Yeon; Jeong, Young-Keun; Kwon, Se-Hun, JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.3, pp.338 - 342, 2012-06

4
Organic donor/acceptor heterojunction photovoltaic devices based on zinc phthalocyanine and a liquid crystalline perylene diimide

Kim J.Y.; Bard A.J., CHEMICAL PHYSICS LETTERS, v.383, no.1-2, pp.11 - 15, 2004-01

5
Effects of the annealing in Ar and H-2/Ar ambients on the microstructure and the electrical resistivity of the copper film prepared by chemical vapor deposition

Rha, SK; Lee, WJ; Lee, SY; Kim, DW; Park, Chong-Ook; Chun , Soung Soon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.11, pp.5781 - 5786, 1996-11

6
Effect of magnetic field on the magnetic domain structure of MnAs film on GaAs(001)

Kim, JB; Lee, YP; Ryu, KS; Shin, Sung-Chul; Akinaga, H; Kim, KW, IEEE TRANSACTIONS ON MAGNETICS, v.42, pp.3249 - 3251, 2006-10

7
Shrinking Core Model for Knudsen Diffusion-Limited Atomic Layer Deposition on a Nanoporous Monolith with an Ultrahigh Aspect Ratio

Lee H.-Y.; An C.J.; Piao S.J.; Ahn D.Y.; Kim M.-T.; Min Y.-S., JOURNAL OF PHYSICAL CHEMISTRY C, v.114, no.43, pp.18601 - 18606, 2010

8
A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5

Lee S.; Jeong D.S.; Jeong J.-H.; Zhe W.; Park Y.-W.; Ahn H.-W.; Cheong B.-K., APPLIED PHYSICS LETTERS, v.96, no.2, 2010

9
A study on the plasma parameters and characteristics of carbon-doped silicon-oxide films by using MTMS/O-2 and He plasmas

Kang M.S.; Yang C.S.; Choi C.K.; Jung W.B., JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.48, no.6, pp.1702 - 1707, 2006

10
Tunable (Ba, Sr)TiO3 interdigital capacitor onto Si wafer for reconfigurable radio

Kim K.-B.; Yun T.-S.; Lee J.-C.; Chaker M.; Wu K., MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.49, no.9, pp.2144 - 2148, 2007

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