Browse "RIMS Journal Papers" by Author Urabe, Yuji

Showing results 1 to 3 of 3

1
Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.5, no.1, 2012-01

2
Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sung-Hoon; Nakane, Ryosho; Urabe, Yuji; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.12, no.4, pp.621 - 628, 2013-07

3
Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy

Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02

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