Showing results 1 to 2 of 2
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.4, pp.456 - 462, 2013-12 |
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors Taoka, Noriyuki; Yokoyama, Masafumi; Kim, Sang Hyeon; Suzuki, Rena; Lee, Sunghoon; Iida, Ryo; Hoshii, Takuya; et al, APPLIED PHYSICS LETTERS, v.103, no.14, 2013-09 |
Discover