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Hole and Valence Band Electron Tunneling in a P-Channel Si Nano-Crystal Memory kwangseok han; ilgweon kim; hyungcheol shin, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.907 - 911, 2000-12 |
Programming Characteristics of P-Channel Si Nano-Crystal Memory kwangseok han; ilgweon kim; hyungcheol shin, IEEE ELECTRON DEVICE LETTERS, v.21, no.6, pp.313 - 315, 2000-06 |
Si Nano-Crystal Memory Cell with Room Temperature Single Electron Effects ilgweon kim; sangyeon han; kwangseok han; jongho lee; hyungcheol shin, JAPANESE JOURNAL OF APPLIED PHYSICS, v.40, no.2A, pp.447 - 451, 2001-02 |
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