DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoo, Yang-Seok | ko |
dc.contributor.author | Na, Jong-Ho | ko |
dc.contributor.author | Son, Sung Jin | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.date.accessioned | 2016-03-07T01:24:00Z | - |
dc.date.available | 2016-03-07T01:24:00Z | - |
dc.date.created | 2016-03-02 | - |
dc.date.created | 2016-03-02 | - |
dc.date.created | 2016-03-02 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.citation | JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.9, pp.095101 | - |
dc.identifier.issn | 0022-3727 | - |
dc.identifier.uri | http://hdl.handle.net/10203/202375 | - |
dc.description.abstract | We developed a direct experimental approach for investigating the correlation between efficiency droop and recombination rate variation under current injection conditions by using time-resolved electroluminescence (EL) technique. We applied this approach to understand the droop phenomenon of GaN-based light-emitting diodes grown on patterned sapphire substrates (LED-on-PAT) and planar sapphire substrates (LED-on-PLA). Because of lower dislocation density and current leakage in LED-on-PAT compared to LED-on-PLA, it was found that the effective carrier density injected into quantum wells (QWs) in LED-on-PAT was higher than that of the LED-on-PLA under the same current injection conditions, based on the analysis of spectral broadening of EL spectra with varying current injection and photoluminescence experiments under resonant and non-resonant excitation conditions. The efficiency droop in LED-on-PAT was found to be much more severe than that of LED-onPLA, despite the higher overall quantum efficiency of LED-on-PAT. From the time-resolved EL analysis, we could separate radiative and non-radiative recombination contributions and directly observe (i) the decrease and saturation of radiative recombination time and (ii) the increase and following decrease in behavior of non-radiative recombination time with increasing current injection level, showing a strong correlation between efficiency droop and recombination rate variation. | - |
dc.language | English | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Carrier dynamics analysis for efficiency droop in GaN-based light-emitting diodes with different defect densities using time-resolved electroluminescence | - |
dc.type | Article | - |
dc.identifier.wosid | 000369496300007 | - |
dc.identifier.scopusid | 2-s2.0-84957556322 | - |
dc.type.rims | ART | - |
dc.citation.volume | 49 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 095101 | - |
dc.citation.publicationname | JOURNAL OF PHYSICS D-APPLIED PHYSICS | - |
dc.identifier.doi | 10.1088/0022-3727/49/9/095101 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Na, Jong-Ho | - |
dc.contributor.nonIdAuthor | Son, Sung Jin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | time-resolved electroluminescence | - |
dc.subject.keywordAuthor | light-emitting diodes | - |
dc.subject.keywordAuthor | efficiency droop | - |
dc.subject.keywordAuthor | carrier dynamics | - |
dc.subject.keywordPlus | QUANTUM EFFICIENCY | - |
dc.subject.keywordPlus | LEDS | - |
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